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學生論文競賽主題說明

奈米電子元件與新型材料應用

本主題範圍涵蓋各類奈米電子元件技術的最新發展與新型材料元件應用,特別是奈米元件相關之技術、新型材料、物理與可靠性分析等等,包含(但不限定)以下領域之論文:(1) Nano Device Technology; (2) High Mobility Channel MOSFETs; (3) High-k/Metal Gate Materials; (4) USJ and Silicide Formation; (5) Process Technology; (6) TFT; (7) Chemistry and Modification of 2D materials; (8) Nano Device Applications of 2D Materials; (9) Device Modeling and Simulation; (10) Reliability。

 

The section will solicit papers describing original work in emerging materials and device technology for advanced nano electron device applications in area such as, but not limited to:(1) Nano Device Technology; (2) High Mobility Channel MOSFETs; (3) High-k/Metal Gate Materials; (4) USJ and Silicide Formation; (5) Process Technology; (6) TFT; (7) Chemistry and Modification of 2D materials; (8) Nano Device Applications of 2D Materials; (9) Device Modeling and Simulation; (10) Reliability。

感測器與前瞻異質整合平台

本主題範圍涵蓋微機電致動器感測器與3D IC異質整合應用相關的基礎建構與設計,包含(但不限定)以下領域之論文:(1)MEMS actuator; (2)MEMS sensor; (3)MEMS Process Technology; (4)MEMS Package & Testing; (5)Nano-scale Film; (6)Biosensors and Nano-structured Sensors; (7)Biomaterials Used for The Electronic Devices; (8)Electronic Manipulation of Biomolecules; (9)Bio-fuel Cells; (10)Fabrication of nanowires; (11) applications of nanowires on biomedical devices or diagnostics; (12) 3D IC design and application; (13) 3D device process and integration。

 

Topics of interest for submission include all aspects of MEMS actuator, sensor and 3D IC integration application, but are not limited to: (1)MEMS actuator; (2)MEMS sensor; (3)MEMS Process Technology; (4)MEMS Package & Testing; (5)Nano-scale Film; (6)Biosensors and Nano-structured Sensors; (7)Biomaterials Used for The Electronic Devices; (8)Electronic Manipulation of Biomolecules; (9)Bio-fuel Cells; (10)Fabrication of nanowires; (11) applications of nanowires on biomedical devices or diagnostics。(12) 3D IC design and application; (13) 3D device process and integration。

高頻技術與功率元件

本主題範圍涵蓋兩大部分,高頻技術主要為射頻/微波/毫米波領域的元件、電路與系統之技術與應用,包含(但不限定)以下領域之論文: (1)射頻/微波元件的製作、量測與模型; (2)微波電路的設計與模擬; (3)微波系統技術與應用; (4)微波被動元件技術; (5)高頻量測技術與電磁波效應; (6)天線與波傳導; 功率元件則包括各類功率元件製作、分析、模型與模擬之技術與應用,包含(但不限定)以下領域之論文:  (1) Power MOSFET; (2) Power Diode; (3) Thyristor; (4) IGBT; (5) SJ Type Devices; (6) GaN Power HEMT; (7) SiC Power Devices; (8) Novel High Power Devices。

 

First topic covers technologies and applications of RF/microwave/millimeter-wave devices, circuits and systems, including (but not limited to) (1) high-frequency device fabrication, characterization and modeling, (2) high-frequency circuit design and simulation, (3) high-frequency systems and applications, (4) high-frequency passive devices, (5) high-frequency measurement techniques and EM field analysis, and (6) antennas and propagation. Second topic covers fabrication, modeling, simulation and applications of power devices, including (but not limited to) (1) Power MOSFET; (2) Power Diode; (3) Thyristor; (4) IGBT; (5) SJ Type Devices; (6) GaN Power HEMT; (7) SiC Power Devices; (8) Novel High Power Devices

奈米檢測技術與應用

本主題範圍涵蓋各類材料或元件相關之檢測分析及檢測技術最新發展與應用,包含(但不限定)以下領域之論文:(1)材料影像分析技術:SEM、AFM、C-AFM、SCM、STM、SSRM、MFM、TEM 及 SNOM (2)材料晶體結構分析技術:TEM 及XRD; (3)材料成分分析技術:EDS、AES、XPS、SIMS 及 FTIR; (4)低溫磁場分析技術:Low-temperature I-V measurement、Low-temperature magnetoelectrical measurement。

 

Topics of interest for submission include all aspects of materials characterizations, novel analyzed techniques, and its application, but are not limited to: (1)Scanning Image Analysis:SEM, AFM, C-AFM, SCM, STM, SSRM, MFM, TEM and SNOM; (2)Structural Diffraction Analysis:TEM and XRD; (3)Chemical Elemental Analysis:EDS, AES, XPS, SIMS and FTIR; (4)Low-temperature High-magnetic Field Analysis:Low-temperature I-V measurement and Low-temperature magnetoelectrical measurement。

 

 

 

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